AlN Lamb波谐振器的电极设计

J. Zou, C. S. Lam
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引用次数: 17

摘要

本文首次分析和总结了电极结构、材料、厚度和数字间换能器(IDT)占空因子(DF)对氮化铝(AlN)兰姆波谐振器性能的影响。通过对换能器和底电极的精心设计和选择,可以将AlN Lamb波谐振器的有效机电耦合系数(k2eff)从2%提高到接近7%。本文的研究结果为AlN Lamb波谐振器换能器的设计奠定了基础。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electrode design of AlN Lamb wave resonators
The impact of electrode configurations, materials, thicknesses and interdigital transducer (IDT) duty factor (DF) on performance of aluminum nitride (AlN) Lamb wave resonators is analyzed and summarized for the first time in this study. By careful design and selection of the transducer and bottom electrodes, the effective electromechanical coupling coefficient (k2eff) of the AlN Lamb wave resonator can be boosted from ~2% to values close to 7%. The results reported in this paper lay the foundation for transducer designs of AlN Lamb wave resonators.
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