基于功率集成电路器件的高能注入新技术

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI:10.1109/ISPSD.1999.764127

D. Patti, G. Franzò, V. Privitera, F. Priolo

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引用次数: 0

摘要

在这项工作中，通过使用高能注入获得了功率集成电路技术的显着改进，从而消除了第二次外延生长。通过快速热退火，可以恢复注入区损伤。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A new high energy implantation based technology for power integrated circuit devices

In this work, a significant improvement of power integrated circuit technology has been obtained by the use of high energy implantation, thus eliminating a second epitaxial growth. The damage in implanted region has been recovered by rapid thermal annealing.

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11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)

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