基于40nm CMOS的0.06mm2±50mV范围- 82dB THD斩波vco传感器读出电路

Chih-Chan Tu, Yu-Kai Wang, Tsung-Hsien Lin
{"title":"基于40nm CMOS的0.06mm2±50mV范围- 82dB THD斩波vco传感器读出电路","authors":"Chih-Chan Tu, Yu-Kai Wang, Tsung-Hsien Lin","doi":"10.23919/VLSIC.2017.8008558","DOIUrl":null,"url":null,"abstract":"A VCO-based sensor readout circuit is presented. It comprises a VCO-based integrator with counters, and a capactively-coupled feedback DAC, to form a 1st-order DSM with high input impedance and wide dynamic range for voltage sensors. Chopping is applied to suppress the flicker noise. The time-domain approach relaxes the voltage swing requirement compared to that of a Gm-C integrator, and thus area efficiency is achieved. The prototype is implemented in 40nm CMOS. It consumes 21μA under 1.2V supply. With a 100mVpp sinusoidal input, it achieves 74.9dB SNDR over 2 kHz BW and the THD is −82dB. This readout circuit is also measured with a Hall sensor to demonstrate its operation. The FoM and distortion achieves the state-of-the-art performance of VCO-based sensor readout circuits.","PeriodicalId":176340,"journal":{"name":"2017 Symposium on VLSI Circuits","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":"{\"title\":\"A 0.06mm2 ± 50mV range −82dB THD chopper VCO-based sensor readout circuit in 40nm CMOS\",\"authors\":\"Chih-Chan Tu, Yu-Kai Wang, Tsung-Hsien Lin\",\"doi\":\"10.23919/VLSIC.2017.8008558\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A VCO-based sensor readout circuit is presented. It comprises a VCO-based integrator with counters, and a capactively-coupled feedback DAC, to form a 1st-order DSM with high input impedance and wide dynamic range for voltage sensors. Chopping is applied to suppress the flicker noise. The time-domain approach relaxes the voltage swing requirement compared to that of a Gm-C integrator, and thus area efficiency is achieved. The prototype is implemented in 40nm CMOS. It consumes 21μA under 1.2V supply. With a 100mVpp sinusoidal input, it achieves 74.9dB SNDR over 2 kHz BW and the THD is −82dB. This readout circuit is also measured with a Hall sensor to demonstrate its operation. The FoM and distortion achieves the state-of-the-art performance of VCO-based sensor readout circuits.\",\"PeriodicalId\":176340,\"journal\":{\"name\":\"2017 Symposium on VLSI Circuits\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"19\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 Symposium on VLSI Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/VLSIC.2017.8008558\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Symposium on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/VLSIC.2017.8008558","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 19

摘要

提出了一种基于vco的传感器读出电路。它包括一个基于vco的带有计数器的积分器和一个电容耦合反馈DAC,形成一个一阶DSM,具有高输入阻抗和宽动态范围的电压传感器。采用斩波抑制闪烁噪声。与Gm-C积分器相比,时域方法降低了对电压摆动的要求,从而实现了面积效率。该原型是在40nm CMOS上实现的。在1.2V电源下功耗为21μA。在100mVpp的正弦输入下,在2khz BW范围内实现74.9dB的SNDR, THD为- 82dB。该读出电路也测量与霍尔传感器,以证明其运作。FoM和失真实现了基于vco的传感器读出电路的最先进性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 0.06mm2 ± 50mV range −82dB THD chopper VCO-based sensor readout circuit in 40nm CMOS
A VCO-based sensor readout circuit is presented. It comprises a VCO-based integrator with counters, and a capactively-coupled feedback DAC, to form a 1st-order DSM with high input impedance and wide dynamic range for voltage sensors. Chopping is applied to suppress the flicker noise. The time-domain approach relaxes the voltage swing requirement compared to that of a Gm-C integrator, and thus area efficiency is achieved. The prototype is implemented in 40nm CMOS. It consumes 21μA under 1.2V supply. With a 100mVpp sinusoidal input, it achieves 74.9dB SNDR over 2 kHz BW and the THD is −82dB. This readout circuit is also measured with a Hall sensor to demonstrate its operation. The FoM and distortion achieves the state-of-the-art performance of VCO-based sensor readout circuits.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信