超低功耗物联网解决方案的半导体平台

T. Dry, T. Letavic
{"title":"超低功耗物联网解决方案的半导体平台","authors":"T. Dry, T. Letavic","doi":"10.23919/VLSIT.2017.7998143","DOIUrl":null,"url":null,"abstract":"Intelligent connected sensor and actuator endpoint nodes enable the Internet-of-Things (IoT). A brief overview of endpoint node functional blocks and requirements for low-power consumption are discussed. VLSI technology enablers for IoT include Ultra low Power (ULP) and Ultra Low Leakage (ULL) semiconductor process platform extensions. ULP and ULL implementations for bulk silicon technologies are presented and compared to fully-depleted silicon-on-insulator (FDSOI) technology. FDSOI utilizes Back Bias (BB) to improve performance and achieve the lowest dynamic and static power, enabling cost-effective low-power IoT applications.","PeriodicalId":176340,"journal":{"name":"2017 Symposium on VLSI Circuits","volume":"103 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Semiconductor platforms for ultra low power IoT solutions\",\"authors\":\"T. Dry, T. Letavic\",\"doi\":\"10.23919/VLSIT.2017.7998143\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Intelligent connected sensor and actuator endpoint nodes enable the Internet-of-Things (IoT). A brief overview of endpoint node functional blocks and requirements for low-power consumption are discussed. VLSI technology enablers for IoT include Ultra low Power (ULP) and Ultra Low Leakage (ULL) semiconductor process platform extensions. ULP and ULL implementations for bulk silicon technologies are presented and compared to fully-depleted silicon-on-insulator (FDSOI) technology. FDSOI utilizes Back Bias (BB) to improve performance and achieve the lowest dynamic and static power, enabling cost-effective low-power IoT applications.\",\"PeriodicalId\":176340,\"journal\":{\"name\":\"2017 Symposium on VLSI Circuits\",\"volume\":\"103 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 Symposium on VLSI Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/VLSIT.2017.7998143\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Symposium on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/VLSIT.2017.7998143","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

智能连接的传感器和执行器端点节点使物联网(IoT)成为可能。简要概述了端点节点的功能模块和低功耗要求。物联网的VLSI技术推动者包括超低功耗(ULP)和超低漏(ULL)半导体工艺平台扩展。介绍了批量硅技术的ULP和ULL实现,并与完全耗尽绝缘体上硅(FDSOI)技术进行了比较。FDSOI利用反向偏置(BB)来提高性能并实现最低的动态和静态功率,从而实现经济高效的低功耗物联网应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Semiconductor platforms for ultra low power IoT solutions
Intelligent connected sensor and actuator endpoint nodes enable the Internet-of-Things (IoT). A brief overview of endpoint node functional blocks and requirements for low-power consumption are discussed. VLSI technology enablers for IoT include Ultra low Power (ULP) and Ultra Low Leakage (ULL) semiconductor process platform extensions. ULP and ULL implementations for bulk silicon technologies are presented and compared to fully-depleted silicon-on-insulator (FDSOI) technology. FDSOI utilizes Back Bias (BB) to improve performance and achieve the lowest dynamic and static power, enabling cost-effective low-power IoT applications.
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