可扩展双极紧凑型模型的生成和集成[HBT示例]

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting Pub Date : 2004-12-13 DOI:10.1109/BIPOL.2004.1365763

D. Sheridan, R. Murty, K. Newton, J.B. Johnson

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引用次数: 4

摘要

本文研究了在现代设计环境中生成和集成可扩展双极模型的方法。此外，对基本的双极参数缩放进行了回顾，并使用可扩展的SiGe HBT模型进行了演示，该模型适用于VBIC、MEXTRAM和HiCUM等模型。

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Generation and integration of scalable bipolar compact models [HBT example]

This paper investigates the methodologies for generating and integrating scalable bipolar models in the modern design environment. Additionally, fundamental bipolar parameter scaling is reviewed and demonstrated with a scalable SiGe HBT model valid for models such as VBIC, MEXTRAM, and HiCUM.

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来源期刊

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting

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