{"title":"陡坡次阈值pn体束缚SOI场效应管的载波分离等效电路建模","authors":"D. Ueda, K. Takeuchi, M. Kobayashi, T. Hiramoto","doi":"10.23919/SNW.2017.8242273","DOIUrl":null,"url":null,"abstract":"In this paper, a new modeling approach for understanding and designing a recently proposed steep subthreshold slope SOI transistor (i.e. PN-Body Tied SOI FET [1-3]) is proposed. We revealed that the abrupt switching operation can be modeled using a simple equivalent circuit comprising two cross-coupled voltage inverters (i.e. electron current and hole current inverters). The model will be useful for designing PNBTFETs with optimum transition voltage, small hysteresis, and low standby current.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Carrier-separated equivalent circuit modeling for steep subthreshold slope PN-body tied SOI FET\",\"authors\":\"D. Ueda, K. Takeuchi, M. Kobayashi, T. Hiramoto\",\"doi\":\"10.23919/SNW.2017.8242273\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a new modeling approach for understanding and designing a recently proposed steep subthreshold slope SOI transistor (i.e. PN-Body Tied SOI FET [1-3]) is proposed. We revealed that the abrupt switching operation can be modeled using a simple equivalent circuit comprising two cross-coupled voltage inverters (i.e. electron current and hole current inverters). The model will be useful for designing PNBTFETs with optimum transition voltage, small hysteresis, and low standby current.\",\"PeriodicalId\":424135,\"journal\":{\"name\":\"2017 Silicon Nanoelectronics Workshop (SNW)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 Silicon Nanoelectronics Workshop (SNW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/SNW.2017.8242273\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SNW.2017.8242273","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
摘要
本文提出了一种新的建模方法来理解和设计最近提出的陡坡亚阈值SOI晶体管(即PN-Body Tied SOI FET[1-3])。我们发现，突然开关操作可以用一个简单的等效电路来模拟，该电路包括两个交叉耦合电压逆变器(即电子电流和空穴电流逆变器)。该模型将有助于设计具有最佳过渡电压、小迟滞和低待机电流的pnbtfet。
Carrier-separated equivalent circuit modeling for steep subthreshold slope PN-body tied SOI FET
In this paper, a new modeling approach for understanding and designing a recently proposed steep subthreshold slope SOI transistor (i.e. PN-Body Tied SOI FET [1-3]) is proposed. We revealed that the abrupt switching operation can be modeled using a simple equivalent circuit comprising two cross-coupled voltage inverters (i.e. electron current and hole current inverters). The model will be useful for designing PNBTFETs with optimum transition voltage, small hysteresis, and low standby current.
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