16.7 fA/cell tunnel- suppressed 16mb SRAM，用于处理宇宙射线引起的多重错误

2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC. Pub Date : 2003-10-27 DOI:10.1109/ISSCC.2003.1234308

Kenichi Osada, Yoshikazu Saitoh, Eishi Ibe, K. Ishibashi

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引用次数: 102

摘要

采用0.13 /spl mu/m CMOS技术，实现了基于电场放松方案和交替错误检测与校正结构的16 Mb SRAM，用于处理宇宙射线引起的多重误差。该IC具有16.7 fA/电池待机电流，电池尺寸为2.06 /spl mu/m/sup 2/， SER小99.5%。

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16.7 fA/cell tunnel-leakage-suppressed 16 Mb SRAM for handling cosmic-ray-induced multi-errors

A 16 Mb SRAM based on an electric-field-relaxed scheme and an alternate error checking and correction architecture for handling cosmic-ray-induced multi-errors is realized in 0.13 /spl mu/m CMOS technology. The IC has a 16.7 fA/cell standby current, a cell size of 2.06 /spl mu/m/sup 2/ and a 99.5% smaller SER.

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2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC.

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