{"title":"n型和p型SOI无结纳米线晶体管的有效迁移率分析","authors":"R. Doria, R. Trevisoli, M. de Souza, M. Pavanello","doi":"10.1109/SBMICRO.2014.6940108","DOIUrl":null,"url":null,"abstract":"This paper reports the behavior of the effective mobility of n- and p-type SOI Trigate Junctionless Nanowire Transistors with different doping concentrations and channel widths down to 20 nm-wide devices. It is shown that the mobility of extremely narrow devices can overcome the bulk silicon mobility independently of the device type. The increase in the maximum mobility observed in narrow devices seems to be more pronounced for heavier doped devices.","PeriodicalId":244987,"journal":{"name":"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"82 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Effective mobility analysis of n- and p-types SOI junctionless nanowire transistors\",\"authors\":\"R. Doria, R. Trevisoli, M. de Souza, M. Pavanello\",\"doi\":\"10.1109/SBMICRO.2014.6940108\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports the behavior of the effective mobility of n- and p-type SOI Trigate Junctionless Nanowire Transistors with different doping concentrations and channel widths down to 20 nm-wide devices. It is shown that the mobility of extremely narrow devices can overcome the bulk silicon mobility independently of the device type. The increase in the maximum mobility observed in narrow devices seems to be more pronounced for heavier doped devices.\",\"PeriodicalId\":244987,\"journal\":{\"name\":\"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)\",\"volume\":\"82 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SBMICRO.2014.6940108\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SBMICRO.2014.6940108","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effective mobility analysis of n- and p-types SOI junctionless nanowire transistors
This paper reports the behavior of the effective mobility of n- and p-type SOI Trigate Junctionless Nanowire Transistors with different doping concentrations and channel widths down to 20 nm-wide devices. It is shown that the mobility of extremely narrow devices can overcome the bulk silicon mobility independently of the device type. The increase in the maximum mobility observed in narrow devices seems to be more pronounced for heavier doped devices.
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