SOI平台上横向MOCVD生长膜上的砷化镓微盘激光器

2022 28th International Semiconductor Laser Conference (ISLC) Pub Date : 2022-10-16 DOI:10.23919/ISLC52947.2022.9943367

Qi Lin, Jie Huang, Liying Lin, Ying Xue, Zengshan Xing, K. Wong, K. Lau

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引用次数: 0

摘要

本文报道了在(001)绝缘体上硅(SOI)晶圆上横向选择性外延生长不同直径的GaAs窃窃廊模式(WGM)微盘激光器的初步结果。室温下脉冲光泵浦的最低阈值为0.7 mJ/cm2。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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GaAs micro-disk lasers on membranes grown by lateral MOCVD on SOI platform

We report preliminary results of GaAs whispering gallery mode (WGM) micro-disk lasers with different diameters by lateral selective epitaxial growth on (001) silicon-on-insulator (SOI) wafers. Under pulse optical pumping at room temperature (RT), the lowest threshold was obtained at 0.7 mJ/cm2.

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2022 28th International Semiconductor Laser Conference (ISLC)

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