H. Shams, H. Abou Gabal, S. Soliman, S. Ebrahim, S. Agamy
{"title":"辐射传感用CdS/CdTe器件的制备与表征","authors":"H. Shams, H. Abou Gabal, S. Soliman, S. Ebrahim, S. Agamy","doi":"10.37394/232017.2020.11.16","DOIUrl":null,"url":null,"abstract":"Several Techniques had been applied to measure Ionizing Radiation. Majority of thistechniques are costly and very complicated. We focus on this research to chemically deposition of CdS to formwith CdTe junction x-ray sensor. CdTe has been electrodeposited onto CdS/FTO glass substrate to formwith previously fabricated CdS layer 4 µm thickness. The optimum potential for CdTe deposition hasbeen studied by potentiostat measurement, it shows that -1.3 is the optimum working potential. The XRDanalysis showed that the CdTe films have highly oriented crystallites with the cubic phase zinc blend withpreferred orientation (111). The band gap Eg extrapolated to be 1.4 eV. Four stacked sensors wereconnected in series to measure the device performance. It was observed that amplitude of the pulseformed due to exposed FTO/CdS/CdTe/Mo detector to X-ray of 33 keV and 1mA intensity is 1.03 V.","PeriodicalId":202814,"journal":{"name":"WSEAS TRANSACTIONS ON ELECTRONICS","volume":"112 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Preparation and Characterization of CdS/CdTe Device for Radiation Sensing\",\"authors\":\"H. Shams, H. Abou Gabal, S. Soliman, S. Ebrahim, S. Agamy\",\"doi\":\"10.37394/232017.2020.11.16\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Several Techniques had been applied to measure Ionizing Radiation. Majority of thistechniques are costly and very complicated. We focus on this research to chemically deposition of CdS to formwith CdTe junction x-ray sensor. CdTe has been electrodeposited onto CdS/FTO glass substrate to formwith previously fabricated CdS layer 4 µm thickness. The optimum potential for CdTe deposition hasbeen studied by potentiostat measurement, it shows that -1.3 is the optimum working potential. The XRDanalysis showed that the CdTe films have highly oriented crystallites with the cubic phase zinc blend withpreferred orientation (111). The band gap Eg extrapolated to be 1.4 eV. Four stacked sensors wereconnected in series to measure the device performance. It was observed that amplitude of the pulseformed due to exposed FTO/CdS/CdTe/Mo detector to X-ray of 33 keV and 1mA intensity is 1.03 V.\",\"PeriodicalId\":202814,\"journal\":{\"name\":\"WSEAS TRANSACTIONS ON ELECTRONICS\",\"volume\":\"112 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-09-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"WSEAS TRANSACTIONS ON ELECTRONICS\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.37394/232017.2020.11.16\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"WSEAS TRANSACTIONS ON ELECTRONICS","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.37394/232017.2020.11.16","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Preparation and Characterization of CdS/CdTe Device for Radiation Sensing
Several Techniques had been applied to measure Ionizing Radiation. Majority of thistechniques are costly and very complicated. We focus on this research to chemically deposition of CdS to formwith CdTe junction x-ray sensor. CdTe has been electrodeposited onto CdS/FTO glass substrate to formwith previously fabricated CdS layer 4 µm thickness. The optimum potential for CdTe deposition hasbeen studied by potentiostat measurement, it shows that -1.3 is the optimum working potential. The XRDanalysis showed that the CdTe films have highly oriented crystallites with the cubic phase zinc blend withpreferred orientation (111). The band gap Eg extrapolated to be 1.4 eV. Four stacked sensors wereconnected in series to measure the device performance. It was observed that amplitude of the pulseformed due to exposed FTO/CdS/CdTe/Mo detector to X-ray of 33 keV and 1mA intensity is 1.03 V.
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