金属诱导结晶法制备玻璃基板上的多晶硅薄膜

27th International Spring Seminar on Electronics Technology: Meeting the Challenges of Electronics Technology Progress, 2004. Pub Date : 2004-05-13 DOI:10.1109/ISSE.2004.1490871

D. Dimova‐Malinovska, O. Angelov, M. Sendova-Vassileva, V. Grigorov, J. Pivin

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引用次数: 2

摘要

研究了不同沉积结构和不同金属浓度/spl λ /ass/a-Si/Al、玻璃/Al/a-Si+Al和玻璃/a-Si+Ni对非晶态硅(a-Si)金属诱导结晶的影响。采用射频磁控溅射在不同的衬底温度下沉积结构，并在低于a-Si固相结晶温度的温度下进行等温退火。退火在空气、N/sub / 2或真空中进行。利用拉曼光谱和卢瑟福后向散射技术研究了所得多晶硅薄膜的结晶度。

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Polycrystalline Si films on glass substrates prepared by metal induced crystallization

Metal induced crystallization of amorphous Si (a-Si) has been studied for different deposited structures and different metal concentrations /spl lambda/ass/a-Si/Al, glass/Al/a-Si+Al and glass/a-Si+Ni. The structures were deposited at different substrate temperatures by RF magnetron sputtering and were isothermally annealed at temperatures below that of the a-Si solid phase crystallization. The annealing was performed in air, N/sub 2/ or in vacuum. Raman spectroscopy and Rutherford Back-scattering were used to study the crystallinity of the resulting poly-Si films.

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27th International Spring Seminar on Electronics Technology: Meeting the Challenges of Electronics Technology Progress, 2004.

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