CMOS/双极电路用于60MHz数字处理

1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI:10.1109/ISSCC.1986.1156892

T. Hotta, I. Masuda, H. Maejima, A. Hotta

{"title":"CMOS/双极电路用于60MHz数字处理","authors":"T. Hotta, I. Masuda, H. Maejima, A. Hotta","doi":"10.1109/ISSCC.1986.1156892","DOIUrl":null,"url":null,"abstract":"CMOS/bipolar circuits with 0.8V internal swing for use in 60MHz digital processing will be discussed, A 7.2ns carry propagation delay time and a 17ns access time have been achieved in a 32b adder and a 128Kb ROM, respectively.","PeriodicalId":440688,"journal":{"name":"1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"79 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"CMOS/bipolar circuits for 60MHz digital processing\",\"authors\":\"T. Hotta, I. Masuda, H. Maejima, A. Hotta\",\"doi\":\"10.1109/ISSCC.1986.1156892\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"CMOS/bipolar circuits with 0.8V internal swing for use in 60MHz digital processing will be discussed, A 7.2ns carry propagation delay time and a 17ns access time have been achieved in a 32b adder and a 128Kb ROM, respectively.\",\"PeriodicalId\":440688,\"journal\":{\"name\":\"1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"volume\":\"79 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.1986.1156892\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.1986.1156892","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

将讨论用于60MHz数字处理的内部摆幅为0.8V的CMOS/双极电路，在32b加器和128Kb ROM中分别实现了7.2ns的携带传播延迟时间和17ns的访问时间。

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CMOS/bipolar circuits for 60MHz digital processing

CMOS/bipolar circuits with 0.8V internal swing for use in 60MHz digital processing will be discussed, A 7.2ns carry propagation delay time and a 17ns access time have been achieved in a 32b adder and a 128Kb ROM, respectively.

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来源期刊

1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

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