翅片厚度和自热变化对finfet的影响

2014 First International Conference on Computational Systems and Communications (ICCSC) Pub Date : 2014-12-01 DOI:10.1109/COMPSC.2014.7032631

Bibin Varghese, G. S. Sruthi, V. V. Kumar, U. S. Kumar

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引用次数: 0

摘要

在这项工作中，我们研究了不同尺寸的变化和自加热对FinFET输出特性和晶格温度的影响。在亚26 nm范围内，传统的平面MOSFET标度面临阈值电压降低、亚阈值摆幅(SS)退化、漏极势垒降低(DIBL)、掺杂物随机波动、介电隧穿导致的泄漏增加以及热阻增加导致的自热增加等问题。研究翅片厚度和自热对finfet输出特性和晶格温度的影响将是设计更复杂、更高效的finfet的重要一步。

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Effect of variations in fin thickness and self-heating on FinFETs

In this work, we have studied Effect of Variations in Different Dimensions and self-heating on FinFET Output characteristics and Lattice Temperature. In the sub 26 nm regime conventional planar MOSFET scaling has been facing problems such as threshold voltage lowering, sub-threshold swing (SS) degradation, drain-induced barrier lowering (DIBL), random dopant fluctuations, leakage increase due to dielectric tunnelling, and problem of increased self-heating due to the increase in thermal resistance. Effect of Variations in Fin Thickness and self-heating on FinFETs Output characteristics and Lattice temperature will be step for designing more sophisticated and efficient FinFETs.

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2014 First International Conference on Computational Systems and Communications (ICCSC)

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