高密度等离子体中低能注入的器件效应

The Fourth International Workshop on Junction Technology, 2004. IWJT '04. Pub Date : 2004-03-15 DOI:10.1109/IWJT.2004.1306752

Hanming Wu, S. Lee, Xing Yu, Yong Liu, J. Chen

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引用次数: 0

摘要

本文提出了高密度等离子体注入形成浅结的方法。用理论和数值方法研究了离子能量分布函数中不可避免的低能分量。最后，分析和讨论了等离子体植入过程中IEDF中这种低能量分量所引起的器件效应。

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Device effect of low energy implantation in high density plasma

In the present paper, high-density plasma implantation is proposed for shallow junction formation. The inevitable low energy component in ion energy distribution function (IEDF) has been studied by theoretical and numerical methods. Finally, the device effects induced by such a low energy component in IEDF in plasma implantation are analyzed and discussed.

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The Fourth International Workshop on Junction Technology, 2004. IWJT '04.

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