低压高性能MOS压控振荡器的比较研究

Proceedings of the 2004 International Symposium on Low Power Electronics and Design (IEEE Cat. No.04TH8758) Pub Date : 2004-08-09 DOI:10.1145/1013235.1013297

J. Zhan, J. Duster, K. Kornegay

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引用次数: 14

摘要

采用IBM 6RF 0.25um CMOS工艺设计并制造了6个10GHz MOS vco。测量和比较了它们的振荡频率、输出幅值和相位噪声性能，结果证实用高电阻率衬底电感代替屏蔽接地电感改善了相位噪声性能。电容源退化也被认为是MOS型压控振荡器的性能限制机制，而不是BJT型压控振荡器的性能增强机制。

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A comparative study of MOS VCOs for low voltage high performance operation

Six 10GHz MOS VCOs were designed and fabricated in the IBM 6RF 0.25um CMOS process. Their oscillation frequency, output amplitude and phase noise performance are measured and compared, and the results confirm that replacing shielded-ground inductors with high-resistivity substrate inductors improves phase noise performance. Capacitive source degeneration has also been identified as a performance limiting mechanism in MOS based VCOs rather than performance enhancing as in BJT based VCOs.

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来源期刊

Proceedings of the 2004 International Symposium on Low Power Electronics and Design (IEEE Cat. No.04TH8758)

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