Chen Zhou, Xiaofei Wang, R. Fung, S. Wen, R. Wong, C. Kim
{"title":"高频交流电迁移寿命测量从32nm测试芯片","authors":"Chen Zhou, Xiaofei Wang, R. Fung, S. Wen, R. Wong, C. Kim","doi":"10.1109/VLSIT.2015.7223696","DOIUrl":null,"url":null,"abstract":"A test circuit for studying Electromigration (EM) effects under realistic high frequency AC stress was implemented in a 32nm High-k Metal Gate (HKMG) process. Four different stress patterns (DC, pulsed DC, square AC and real AC) can be generated using on-chip circuits. Local heaters are used to raise the die temperature to >300°C for accelerated testing. Experiment results over 52.7 hours show no AC stress induced failures under 325°C, 1.5V (driver supply) at 200 MHz and 900 MHz. However, the pre-AC stress had an impact on the DC EM distribution.","PeriodicalId":181654,"journal":{"name":"2015 Symposium on VLSI Technology (VLSI Technology)","volume":"129 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"High frequency AC electromigration lifetime measurements from a 32nm test chip\",\"authors\":\"Chen Zhou, Xiaofei Wang, R. Fung, S. Wen, R. Wong, C. Kim\",\"doi\":\"10.1109/VLSIT.2015.7223696\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A test circuit for studying Electromigration (EM) effects under realistic high frequency AC stress was implemented in a 32nm High-k Metal Gate (HKMG) process. Four different stress patterns (DC, pulsed DC, square AC and real AC) can be generated using on-chip circuits. Local heaters are used to raise the die temperature to >300°C for accelerated testing. Experiment results over 52.7 hours show no AC stress induced failures under 325°C, 1.5V (driver supply) at 200 MHz and 900 MHz. However, the pre-AC stress had an impact on the DC EM distribution.\",\"PeriodicalId\":181654,\"journal\":{\"name\":\"2015 Symposium on VLSI Technology (VLSI Technology)\",\"volume\":\"129 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-06-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 Symposium on VLSI Technology (VLSI Technology)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2015.7223696\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 Symposium on VLSI Technology (VLSI Technology)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2015.7223696","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High frequency AC electromigration lifetime measurements from a 32nm test chip
A test circuit for studying Electromigration (EM) effects under realistic high frequency AC stress was implemented in a 32nm High-k Metal Gate (HKMG) process. Four different stress patterns (DC, pulsed DC, square AC and real AC) can be generated using on-chip circuits. Local heaters are used to raise the die temperature to >300°C for accelerated testing. Experiment results over 52.7 hours show no AC stress induced failures under 325°C, 1.5V (driver supply) at 200 MHz and 900 MHz. However, the pre-AC stress had an impact on the DC EM distribution.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
