CdTe/ZnTe单量子阱的光学增益和带间跃迁

2009 9th International Conference on Numerical Simulation of Optoelectronic Devices Pub Date : 2009-10-30 DOI:10.1109/NUSOD.2009.5297249

J. H. You, J. T. Woo, D. U. Lee, T. W. Kim, K. Yoo, H. L. Park

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引用次数: 0

摘要

利用非相互作用对格林函数和能量空间积分函数计算了不同CdTe宽度的CdTe/ZnTe单量子阱的光学增益。考虑光学增益计算的从地面电子子带到地面重空穴子带的带间跃迁能量与从PL光谱中得到的跃迁能量在质量上是合理的。

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Optical gains and interband transitions of CdTe/ZnTe single quantum wells

The optical gains of the CdTe/ZnTe single quantum wells with various CdTe widths were calculated by using a non-interacting pair Green's function and by an energy space integrated function. The interband transition energies from the ground electronic subband to the ground heavy-hole subband calculated taking into account optical gains were in qualitatively reasonable agreement with those determined from the PL spectra.

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2009 9th International Conference on Numerical Simulation of Optoelectronic Devices

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