高增益30gb /s SiGe放大器中衬底耦合的实验验证

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting Pub Date : 2004-12-13 DOI:10.1109/BIPOL.2004.1365798

W. Steiner, H. Rein, J. Berntgen

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引用次数: 1

摘要

通过测量验证了衬底耦合对最大(n / n / r)通阻高达25 kR的30 Gbls极限SiCe放大器性能的影响。为了在高输入灵敏度下实现可靠的工作，必须同时采用几种抑制噪声耦合的技术。

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Experimental verification of substrate coupling in a high-gain 30 Gb/s SiGe amplifier

n e influence of substrate coupling on the performance of a limiting 30 Gbls SiCe amplifier with a maximum ( n o n h e a r ) transimpedance as high as 25 kR has been veri6ed hy measurements. Several techniques for noisecoupling suppression had to be applied simultaneously to ohfain reliable operation at high input sensitirity.

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Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting

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