量子共振隧穿效应与多值逻辑存储器

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI:10.1109/ICSICT.1998.785956

Liang Ruigang, Wang Jian-nong, W. Yuqi, Dong Wenfu, Wu Dexin

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引用次数: 1

摘要

提出了一种基于选择性湿法蚀刻和GaAs气桥的新型制备工艺，可制备出AlAs/GaAs、AlAs/InAs/GaAs量子点双势垒量子阱亚微米谐振隧道二极管(RTD)，其峰谷电流比可达20以上。提出了一种带rtd的多电平逻辑SRAM模型。

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Quantum resonant tunneling effect and multi-value logic memory

A novel fabrication process, based on selective wet etching and GaAs air-bridge was developed to produce AlAs/GaAs, AlAs/InAs/GaAs quantum dots double barrier quantum well sub-micron resonant tunneling diodes (RTD), and the peak to valley current ratio could be over 20. A new model of multilevel logic SRAM with RTDs was proposed.

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1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)

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