低于6 GHz频段应用的InAlN/GaN HEMT可行性研究

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI:10.1109/BCICTS45179.2019.8972761

Kazutaka Inoue, K. Sugawara, K. Kikuchi, I. Makabe, Hiroshi Yamamoto

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引用次数: 1

摘要

本文介绍了高击穿电压InAlN HEMT的发展以及InAlN HEMT向更低频率范围(包括5G sub- 6ghz频段应用)的可能性。所研制的具有GaN帽层的InAlN势垒HEMT在栅极处成功抑制了1 × 10-4A/mm的栅极漏电流，漏极偏置为-100 V。负载-拉力测量结果表明，所开发的InAlN HEMT具有优异的效率，提高了3个点，这是由于利用了更高的InAlN/GaN界面的片状电子密度，使其膝盖轮廓更清晰。

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Feasibility Study of InAlN/GaN HEMT for sub-6 GHz Band Applications

This paper describes the high breakdown voltage InAlN HEMT development and the possibility of InAlN HEMT to lower frequency range, including 5G sub-6 GHz band applications. The developed InAlN barrier HEMT with GaN cap layer was successfully suppressed the gate leakage current of 1 x 10-4A/mm at the gate to drain bias of -100 V. The load-pull measurement clarified the superior efficiency of the developed InAlN HEMT by 3 points, which is attributed to the sharper knee profile by utilizing higher sheet electron density of InAlN/GaN interface.

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2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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