{"title":"一个超大规模集成电路128通道数据链路控制","authors":"P. Chao, G. Cyr, T. Hiller, R. King, R. Wilson","doi":"10.1109/ISSCC.1987.1157156","DOIUrl":null,"url":null,"abstract":"A controller with a 160K transistor automatically extracted from a behavorial description and fabricated in 1μm CMOS will be described. The chip is 367×390 mils, attaining a device density of 0.9mil2per transistor and dissipates 600mW at a clock rate of 8MHz.","PeriodicalId":102932,"journal":{"name":"1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A VLSI 128-channel data link control\",\"authors\":\"P. Chao, G. Cyr, T. Hiller, R. King, R. Wilson\",\"doi\":\"10.1109/ISSCC.1987.1157156\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A controller with a 160K transistor automatically extracted from a behavorial description and fabricated in 1μm CMOS will be described. The chip is 367×390 mils, attaining a device density of 0.9mil2per transistor and dissipates 600mW at a clock rate of 8MHz.\",\"PeriodicalId\":102932,\"journal\":{\"name\":\"1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.1987.1157156\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.1987.1157156","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A controller with a 160K transistor automatically extracted from a behavorial description and fabricated in 1μm CMOS will be described. The chip is 367×390 mils, attaining a device density of 0.9mil2per transistor and dissipates 600mW at a clock rate of 8MHz.