无片外电容改善LDO稳压器瞬态响应的新技术

C. Parikh, Gopal Agarwal
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引用次数: 2

摘要

提出了一种无片外电容的低差(LDO)稳压器新技术。当负载电流在50ns内从0切换到200mA时,该技术将输出电压降限制在100mV左右。假定片上负载电容为200pF。所提出的额外电路只需要5个晶体管和一个1pf的小电容,消耗110μA的静态电流,并且仅在输出突然变化时才影响LDO环路的工作。在Spice中验证了结果,该结果用于1.8 v LDO,标称输入电压为2 v,参考电压为1.24 v,采用180nm CMOS技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
New technique to improve transient response of LDO regulators without an off-chip capacitor
A new technique for low dropout (LDO) regulators operating without an off-chip capacitor is proposed. The technique restricts the output voltage drop to around 100mV when the load current switches from 0 to 200mA in 50ns. An on-chip load capacitance of 200pF is assumed. The proposed extra circuitry requires only 5 transistors and a small 1pf capacitor, consumes 110μA of quiescent current, and affects the LDO loop operation only when the output changes suddenly. Results are verified in Spice, for a 1.8-V LDO with a 2-V nominal input voltage and a 1.24-V reference voltage in an 180nm CMOS technology.
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