{"title":"超低功耗2.4 GHz接收器射频前端,采用射频正交通用级,适用于蓝牙低功耗应用","authors":"Sinyoung Kim, Taejong Kim, K. Kwon","doi":"10.1109/ISOCC.2017.8368873","DOIUrl":null,"url":null,"abstract":"In this paper, an ultra-low-power 2.4 GHz receiver RF front-end adopting a RF quadrature Gm-stage for Bluetooth low energy applications is proposed. The proposed quadrature Gm-stage in a mixer performs a single-to-differential conversion and minimizes power consumption of the LO path because the block generating quadrature signals such as a divider-by-2, a poly-phase filter and a quadrature voltage controlled oscillator are not required. The proposed quadrature Gm-stage adopting the gain and phase mismatch compensator generates adequate quadrature signals at 2.4 GHz. The prototype, realized in 65 nm CMOS process, achieves a conversion gain of 36 dB, a NF of 2.1 dB, and an IIP3 of −26 dBm while consuming 0.9 mA at supply voltage of 1 V.","PeriodicalId":248826,"journal":{"name":"2017 International SoC Design Conference (ISOCC)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"An ultra-low-power 2.4 GHz receiver RF front-end employing a RF quadrature Gm-stage for Bluetooth low energy applications\",\"authors\":\"Sinyoung Kim, Taejong Kim, K. Kwon\",\"doi\":\"10.1109/ISOCC.2017.8368873\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, an ultra-low-power 2.4 GHz receiver RF front-end adopting a RF quadrature Gm-stage for Bluetooth low energy applications is proposed. The proposed quadrature Gm-stage in a mixer performs a single-to-differential conversion and minimizes power consumption of the LO path because the block generating quadrature signals such as a divider-by-2, a poly-phase filter and a quadrature voltage controlled oscillator are not required. The proposed quadrature Gm-stage adopting the gain and phase mismatch compensator generates adequate quadrature signals at 2.4 GHz. The prototype, realized in 65 nm CMOS process, achieves a conversion gain of 36 dB, a NF of 2.1 dB, and an IIP3 of −26 dBm while consuming 0.9 mA at supply voltage of 1 V.\",\"PeriodicalId\":248826,\"journal\":{\"name\":\"2017 International SoC Design Conference (ISOCC)\",\"volume\":\"44 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 International SoC Design Conference (ISOCC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISOCC.2017.8368873\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International SoC Design Conference (ISOCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISOCC.2017.8368873","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An ultra-low-power 2.4 GHz receiver RF front-end employing a RF quadrature Gm-stage for Bluetooth low energy applications
In this paper, an ultra-low-power 2.4 GHz receiver RF front-end adopting a RF quadrature Gm-stage for Bluetooth low energy applications is proposed. The proposed quadrature Gm-stage in a mixer performs a single-to-differential conversion and minimizes power consumption of the LO path because the block generating quadrature signals such as a divider-by-2, a poly-phase filter and a quadrature voltage controlled oscillator are not required. The proposed quadrature Gm-stage adopting the gain and phase mismatch compensator generates adequate quadrature signals at 2.4 GHz. The prototype, realized in 65 nm CMOS process, achieves a conversion gain of 36 dB, a NF of 2.1 dB, and an IIP3 of −26 dBm while consuming 0.9 mA at supply voltage of 1 V.