{"title":"对本体二极管和快速二极管MOSFET在谐振拓扑中所起的作用进行了评估","authors":"Domenico Nardo, Alfio Scuto, S. Buonomo","doi":"10.1109/APEC39645.2020.9124541","DOIUrl":null,"url":null,"abstract":"The aim of this paper is to evaluate and understand the failure mechanism due to reverse recovery of the intrinsic body diode of the Super Junction MOSFET in terms of physical processes both inside the device and at the converter level. Nowadays, higher reliability and theoretically failure free systems are in high demand in order to maintain service continuity in typical telecom or server applications. The topologies under analysis in this paper are the half bridge resonant converter (HB LLC) and the full bridge resonant converter (FBLLC). Moreover, a solution for this problem based on the fast recovery diode SJ MOSFET based on MDmesh™ technology from STMicroelectronics was proposed.","PeriodicalId":171455,"journal":{"name":"2020 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An evaluation of the failures in resonant topologies due to the body diode and the role of fast diode MOSFET\",\"authors\":\"Domenico Nardo, Alfio Scuto, S. Buonomo\",\"doi\":\"10.1109/APEC39645.2020.9124541\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The aim of this paper is to evaluate and understand the failure mechanism due to reverse recovery of the intrinsic body diode of the Super Junction MOSFET in terms of physical processes both inside the device and at the converter level. Nowadays, higher reliability and theoretically failure free systems are in high demand in order to maintain service continuity in typical telecom or server applications. The topologies under analysis in this paper are the half bridge resonant converter (HB LLC) and the full bridge resonant converter (FBLLC). Moreover, a solution for this problem based on the fast recovery diode SJ MOSFET based on MDmesh™ technology from STMicroelectronics was proposed.\",\"PeriodicalId\":171455,\"journal\":{\"name\":\"2020 IEEE Applied Power Electronics Conference and Exposition (APEC)\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE Applied Power Electronics Conference and Exposition (APEC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APEC39645.2020.9124541\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Applied Power Electronics Conference and Exposition (APEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APEC39645.2020.9124541","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An evaluation of the failures in resonant topologies due to the body diode and the role of fast diode MOSFET
The aim of this paper is to evaluate and understand the failure mechanism due to reverse recovery of the intrinsic body diode of the Super Junction MOSFET in terms of physical processes both inside the device and at the converter level. Nowadays, higher reliability and theoretically failure free systems are in high demand in order to maintain service continuity in typical telecom or server applications. The topologies under analysis in this paper are the half bridge resonant converter (HB LLC) and the full bridge resonant converter (FBLLC). Moreover, a solution for this problem based on the fast recovery diode SJ MOSFET based on MDmesh™ technology from STMicroelectronics was proposed.
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