用于互补薄soi SiGeC BiCMOS技术的自对准pnp HBT的开发

2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 2007-10-22 DOI:10.1109/BIPOL.2007.4351833

J. Duvernay, F. Brossard, G. Borot, L. Boissonnet, B. Vandelle, L. Rubaldo, F. Deleglise, G. Avenier, P. Chevalier, B. Rauber, D. Dutartre, A. Chantre

{"title":"用于互补薄soi SiGeC BiCMOS技术的自对准pnp HBT的开发","authors":"J. Duvernay, F. Brossard, G. Borot, L. Boissonnet, B. Vandelle, L. Rubaldo, F. Deleglise, G. Avenier, P. Chevalier, B. Rauber, D. Dutartre, A. Chantre","doi":"10.1109/BIPOL.2007.4351833","DOIUrl":null,"url":null,"abstract":"This paper describes the development of a thin-SOI pnp SiGeC HBT using a self-aligned selective epitaxy emitter/base architecture. Static and dynamic device characteristics are presented, and first results from a full 130 nm thin-SOI complementary SiGeC BiCMOS technology are reported.","PeriodicalId":356606,"journal":{"name":"2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Development of a self-aligned pnp HBT for a complementary thin-SOI SiGeC BiCMOS technology\",\"authors\":\"J. Duvernay, F. Brossard, G. Borot, L. Boissonnet, B. Vandelle, L. Rubaldo, F. Deleglise, G. Avenier, P. Chevalier, B. Rauber, D. Dutartre, A. Chantre\",\"doi\":\"10.1109/BIPOL.2007.4351833\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the development of a thin-SOI pnp SiGeC HBT using a self-aligned selective epitaxy emitter/base architecture. Static and dynamic device characteristics are presented, and first results from a full 130 nm thin-SOI complementary SiGeC BiCMOS technology are reported.\",\"PeriodicalId\":356606,\"journal\":{\"name\":\"2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-10-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.2007.4351833\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.2007.4351833","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 8

摘要

本文描述了一种使用自对准选择性外延发射极/基极结构的薄soi pnp SiGeC HBT的开发。介绍了器件的静态和动态特性，并报道了130 nm全薄soi互补SiGeC BiCMOS技术的第一个结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Development of a self-aligned pnp HBT for a complementary thin-SOI SiGeC BiCMOS technology

This paper describes the development of a thin-SOI pnp SiGeC HBT using a self-aligned selective epitaxy emitter/base architecture. Static and dynamic device characteristics are presented, and first results from a full 130 nm thin-SOI complementary SiGeC BiCMOS technology are reported.

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2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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