利用硅纳米线进行生物检测的精细电荷传感

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2016-04-25 DOI:10.1109/VLSI-TSA.2016.7480537

C. Carmignani, O. Rozeau, P. Scheiblin, A. Thuaire, P. Reynaud, S. Barraud, T. Ernst, S. Chéramy, M. Vinet

{"title":"利用硅纳米线进行生物检测的精细电荷传感","authors":"C. Carmignani, O. Rozeau, P. Scheiblin, A. Thuaire, P. Reynaud, S. Barraud, T. Ernst, S. Chéramy, M. Vinet","doi":"10.1109/VLSI-TSA.2016.7480537","DOIUrl":null,"url":null,"abstract":"This paper proposes an extensive analysis of the impact of both structural effect and charge parameters on silicon nanowire-based biological sensors, for single-charge detection. These parameters are calibrated on physical and electrical characterizations and are subsequently introduced in a compact model to predict the signal over noise ratio (SNR). We finally propose rules for the design of nanowires and recommendations for the placement of the biological element, inducing the single charge release.","PeriodicalId":441941,"journal":{"name":"2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Fine charge sensing using a silicon nanowire for biodetection\",\"authors\":\"C. Carmignani, O. Rozeau, P. Scheiblin, A. Thuaire, P. Reynaud, S. Barraud, T. Ernst, S. Chéramy, M. Vinet\",\"doi\":\"10.1109/VLSI-TSA.2016.7480537\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper proposes an extensive analysis of the impact of both structural effect and charge parameters on silicon nanowire-based biological sensors, for single-charge detection. These parameters are calibrated on physical and electrical characterizations and are subsequently introduced in a compact model to predict the signal over noise ratio (SNR). We finally propose rules for the design of nanowires and recommendations for the placement of the biological element, inducing the single charge release.\",\"PeriodicalId\":441941,\"journal\":{\"name\":\"2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)\",\"volume\":\"49 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-04-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSI-TSA.2016.7480537\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI-TSA.2016.7480537","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文广泛分析了结构效应和电荷参数对硅纳米线生物传感器单电荷检测的影响。这些参数在物理和电气特性上进行校准，然后引入一个紧凑的模型来预测信噪比(SNR)。最后，我们提出了纳米线的设计规则和生物元件的放置建议，以诱导单电荷释放。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Fine charge sensing using a silicon nanowire for biodetection

This paper proposes an extensive analysis of the impact of both structural effect and charge parameters on silicon nanowire-based biological sensors, for single-charge detection. These parameters are calibrated on physical and electrical characterizations and are subsequently introduced in a compact model to predict the signal over noise ratio (SNR). We finally propose rules for the design of nanowires and recommendations for the placement of the biological element, inducing the single charge release.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

自引率

0.00%

发文量