超声波用纳米结构ZnO薄膜的掠射角沉积

Manuel Pelayo Garcia, Kevin L. McAughey, D. Gibson, D. Hughes, C. Núñez
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引用次数: 1

摘要

超声波传感器在材料的无损检测(NDT)方面显示出巨大的潜力,广泛应用于医疗保健/监测(例如生物医学,肌肉恢复,癌症早期检测),工业和国防(例如用于未命名飞行器的接近传感器- UAV;探测潜艇)。大多数传统的超声波传感器都是基于单片压电陶瓷材料(例如PZT, PbTiO3或PMN-PT),这些材料体积太大,不符合要求,无法在柔性基板上集成。为了解决这些缺点,ZnO薄膜由于具有压电系数高、工作频率可调性好、带宽大、材料和制造成本低、与柔性衬底兼容以及生物相容性等特性,成为低频和高频超声换能器的替代压电材料。本文分析了ZnO薄膜在不同反应溅射条件下的掠角沉积(GLAD),优化后的ZnO薄膜既能满足高结晶c轴取向的双重要求,又能控制其作为超声传感器压电材料的倾斜角度。分析了ZnO纳米结构薄膜的形貌、结晶度和组成等特性与GLAD条件(相对于衬底表面的气体通量角(α))和等离子体条件(等离子体功率、衬底位置、衬底温度、总气流量和加工/反应气比)的关系。β角为α=88°时,得到的压电系数d33为33.1±1.7 pm/V,超过ZnO本体的压电系数12.4 pm/V。研究了超声传感应用中薄膜标题角(β)对压电性能的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Glancing Angle Deposition of Nanostructured ZnO Films for Ultrasonics
Ultrasonic sensors have demonstrated great potential for non-destructive testing (NDT) of materials, being widely applicable in health care/monitoring (e.g. biomedical, muscle recovery, cancer early detection), industry, and defence (e.g. proximity sensors used in unnamed aerial vehicles - UAV; detection of submarines). Most conventional ultrasonic sensors are based on monolithic piezoelectric ceramic materials (e.g. PZT, PbTiO3 or PMN-PT) which are too bulky and nonconforming to enable their integration on flexible substrates. To address these drawbacks, ZnO thin films have emerged as an alternative piezoelectric material for low profile and high-frequency ultrasonic transducers due to properties such as high piezoelectric coefficient, great tuneability of working frequency, large bandwidth, low-cost of materials and manufacturing, compatibility with flexible substrates, and biocompatibility. This work analyses glancing angle deposition (GLAD) of ZnO thin films at different reactive sputtering conditions optimised to meet dual requirements of highly crystalline c-axis orientation while controlling the inclined angle of resulting nanostructured films for their application as piezoelectric material in ultrasonic sensors. Characteristics of ZnO nanostructured films, including morphology, crystallinity, and composition, are analysed as a function of GLAD conditions (gas flux angle with respect the substrate surface (α) and plasma conditions (plasma power, substrate position, substrate temperature, total gas-flow, and processing/reactive gas ratio). The obtained piezoelectric values for β angles of α=88° present d33 values of 33.1±1.7 pm/V, surpassing the piezoelectric coefficient found in ZnO bulk 12.4 pm/V. The influence of film titled angle (β) on piezoelectric performance for ultrasound sensing applications will be studied.
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