一种紧凑的相变存储器二极管阵列模型

2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2010-12-01 DOI:10.1109/EDSSC.2010.5713734

Yanmei Su, Laidong Wang, Ruonan Wang, Xukai Zhang, Yiqun Wei, Wei Wang, Yong Ma, Xinnan Lin, Jin He

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引用次数: 3

摘要

本文提出了一种适用于相变存储器(PCM)的紧凑二极管阵列模型。从二极管阵列结构和数值模拟结果出发，结合经典二极管方程和简化的双极器件公式，提出了准物理紧凑模型。该模型通过参数设置，可以准确计算出不同泄漏电流分量。此外，该模型是一种开放模型结构，通过参数提取可以适用于不同的加工工艺。这些特性有助于进一步研究载流子传输的物理机理，从而说明这种阵列二极管器件的器件物理特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A compact model of diode array for Phase Change Memory

In this paper, a compact diode array model for Phase Change Memory (PCM) application is presented. From the diode array structure and numerical simulation result, a quasi-physical compact model is proposed by combining the classical diode equation and simplified bipolar device formulation. This model results in accurate calculation of different leakage current components with parameter setting. Furthermore, the presented model is an open model structure, and can be applied in different fabrication process with the parameter extraction. All these characteristics make it useful in further study of physical mechanism of carrier transmissions in order to illustrate the device physics of such an array diode device.

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来源期刊

2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

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