嵌入式逻辑兼容OTP存储器的自收敛微调，用于降低低压sram的VT变化

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2014-04-28 DOI:10.1109/VLSI-TSA.2014.6839666

Sheng-Yen Chien, P. Lin, Hung-Yu Chen, C. Lin, Y. King

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引用次数: 1

摘要

通过金属栅极WL耦合的自对准氮化物(SAN)逻辑NVM单元被集成到低压SRAM设计中。取代SRAM单元中的下拉晶体管，SAN OTP设备用于补偿两个分支之间的不匹配。通过自收敛的包层编程操作，新的SRAM单元已被证明可以有效地抑制工艺变化效应，特别是在低压应用中。

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Self-convergent trimming of embedded logic compatible OTP memory for VT variation reduction in low voltage SRAMs

Self-align nitride (SAN) logic NVM cell coupled by metal gate WL is incorporated into a low-voltage SRAM design. Replacing pull-down transistors in SRAM cells, SAN OTP devices is used to compensate mismatches between the two branches. Through a self-convergent blanket programming operation, the new SRAM cell has been demonstrated to effectively suppress process variation effect, especially critical in low-voltage applications.

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Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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