级联码拓扑GaN-HEMT的特性及与现有功率器件的比较

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2018-05-01 DOI:10.1109/ISPSD.2018.8393636

S. Buetow, R. Herzer

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引用次数: 13

摘要

本文介绍了一种650V, 28mΩ GaN-HEMT在cascode拓扑结构中的完全静态和动态特性以及可靠性研究。为了展示GaN-HEMT的整体性能，给出了650V GaN-HEMT与650V Si-IGBT3 (IFX)和Si-CooLMOS C7 (IFX，具有快速Si-FWD和SiC-FWD)相比，每个芯片面积的输出电流(A / mm2)与三相逆变器开关频率的关系。

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Characterization of GaN-HEMT in cascode topology and comparison with state of the art-power devices

The paper presents a fully static and dynamic characterization and also reliability investigations of a 650V, 28mΩ GaN-HEMT in Cascode-topology. To show the overall performance of GaN-HEMT the output current per chip area (A per mm2) versus switching frequency of a three phase inverter is presented for the 650V GaN-HEMT in comparison to 650V Si-IGBT3 (IFX) and Si-CooLMOS C7 (IFX, with fast Si-FWD and SiC-FWD).

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来源期刊

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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