嵌入mn纳米点对富硅氧化物阻性开关的影响

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI:10.1109/ISTDM.2014.6874687

T. Arai, Chong Liu, A. Ohta, K. Makihara, S. Miyazaki

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引用次数: 0

摘要

采用远程H2等离子体处理方法，在EB蒸发SiOx上制备了面密度高达~2.4×1011 cm-2、平均直径约~14 nm的mn纳米点。在SiOx中包埋mn纳米点可以有效地降低工作电压的分散性和电阻的ON/OFF比。

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Impact of embedded Mn-Nanodots on resistive switching in Si-rich oxides

Mn-Nanodots with an areal dot density as high as ~2.4×10¹¹ cm^-2 and an average diameter of ~14 nm were fabricated on EB evaporated SiO_x by remote H₂ plasma treatment. The embedding of Mn-nanodots in SiO_x was effective to reduce the dispersions of operation voltages and ON/OFF ratio in resistance.

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2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

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