通道掺杂对纳米finfet中NBTI可靠性和可变性的影响

2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2019-07-01 DOI:10.1109/IPFA47161.2019.8984834

Zhe Zhang, Runsheng Wang, Yangyuan Wang, Ru Huang

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引用次数: 0

摘要

本文采用“原子”TCAD模拟方法，全面研究了通道掺杂浓度(Nch)对负偏置温度不稳定性(NBTI)可靠性和可变性的依赖关系。研究了不同Nch下的ΔVth分布和电流密度分布。这有助于理解NBTI在纳米器件中的降解过程。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Impacts of Channel Doping on NBTI Reliability and Variability in Nanoscale FinFETs

In this paper, the channel doping concentration (Nch) dependence of negative bias temperature instability (NBTI) reliability and variability is comprehensively studied using ‘atomistic’ TCAD simulations. The ΔVth distributions and current density distributions at different Nch are investigated. It is helpful for understanding of NBTI degradation in nanoscale devices.

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来源期刊

2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)

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