D. K. Pal, K. Sabri, M.T.L. Kee, Song Jin Yeong, Park Hyun Suck
{"title":"覆盖大范围工作电压的I/O过程优化","authors":"D. K. Pal, K. Sabri, M.T.L. Kee, Song Jin Yeong, Park Hyun Suck","doi":"10.1109/SMELEC.2006.380701","DOIUrl":null,"url":null,"abstract":"A process has been developed to cover wide range I/O operation voltage (1.8V to 3.3V) without changing the 3.3V I/O library at author's organization to meet the market demand by optimization of 3.3V process. The main emphasis is given on to improve the Idsat current from the baseline and maintain the Ioff comparable as 3.3V process. This process passed all device level reliability test. This process is used to fabricate wide range I/O operation voltage device at author's organization.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"I/O Process Optimization to Cover Wide Range Operation Voltage\",\"authors\":\"D. K. Pal, K. Sabri, M.T.L. Kee, Song Jin Yeong, Park Hyun Suck\",\"doi\":\"10.1109/SMELEC.2006.380701\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A process has been developed to cover wide range I/O operation voltage (1.8V to 3.3V) without changing the 3.3V I/O library at author's organization to meet the market demand by optimization of 3.3V process. The main emphasis is given on to improve the Idsat current from the baseline and maintain the Ioff comparable as 3.3V process. This process passed all device level reliability test. This process is used to fabricate wide range I/O operation voltage device at author's organization.\",\"PeriodicalId\":136703,\"journal\":{\"name\":\"2006 IEEE International Conference on Semiconductor Electronics\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE International Conference on Semiconductor Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMELEC.2006.380701\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Conference on Semiconductor Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2006.380701","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
I/O Process Optimization to Cover Wide Range Operation Voltage
A process has been developed to cover wide range I/O operation voltage (1.8V to 3.3V) without changing the 3.3V I/O library at author's organization to meet the market demand by optimization of 3.3V process. The main emphasis is given on to improve the Idsat current from the baseline and maintain the Ioff comparable as 3.3V process. This process passed all device level reliability test. This process is used to fabricate wide range I/O operation voltage device at author's organization.
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