Fe/InxGa1−xAs异质结构中自旋霍尔效应的电测量

69th Device Research Conference Pub Date : 2011-06-20 DOI:10.1109/DRC.2011.5994468

E. Garlid, Q. Hu, C. Geppert, M. Chan, C. Palmstrøm, P. Crowell

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引用次数: 0

摘要

关于自旋霍尔效应(SHE)以及利用自旋霍尔效应产生或操纵自旋电流的各种方法已经有了广泛的理论讨论。然而，最近只有少数实验研究了这种效应，并且在半导体材料中，他们依靠光学技术来检测或产生自旋[1,2]。

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Electrical measurement of the spin Hall effects in Fe/InxGa1−xAs heterostructures

There has been extensive theoretical discussion of the spin Hall effect (SHE) and the various ways that it could be exploited to generate or manipulate spin currents. However, only a handful of recent experiments have investigated this effect, and in semiconductor materials they have relied on optical techniques to either detect or generate spins [1,2].

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69th Device Research Conference

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