ET高通孔电阻在晶圆制造中的失效机理研究

2006 IEEE International Conference on Semiconductor Electronics Pub Date : 2006-11-01 DOI:10.1109/SMELEC.2006.380765

H. Younan, Tan Sock Khim, Li Kun, Z. Siping

{"title":"ET高通孔电阻在晶圆制造中的失效机理研究","authors":"H. Younan, Tan Sock Khim, Li Kun, Z. Siping","doi":"10.1109/SMELEC.2006.380765","DOIUrl":null,"url":null,"abstract":"In this paper, an ET high via resistance case was investigated. TEM/EDX technique was used for identification of the root cause. Failure mechanism of Al fluoride defects is discussed. Some preventive actions/solutions were implemented to improve the process margin and eliminate the problem.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Studies on Failure Mechanism of ET High Via Resistance in Wafer Fabrication\",\"authors\":\"H. Younan, Tan Sock Khim, Li Kun, Z. Siping\",\"doi\":\"10.1109/SMELEC.2006.380765\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, an ET high via resistance case was investigated. TEM/EDX technique was used for identification of the root cause. Failure mechanism of Al fluoride defects is discussed. Some preventive actions/solutions were implemented to improve the process margin and eliminate the problem.\",\"PeriodicalId\":136703,\"journal\":{\"name\":\"2006 IEEE International Conference on Semiconductor Electronics\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE International Conference on Semiconductor Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMELEC.2006.380765\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Conference on Semiconductor Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2006.380765","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文研究了一种ET高通孔电阻的情况。采用TEM/EDX技术确定了根本原因。讨论了氟化铝缺陷的失效机理。实施了一些预防措施/解决方案以提高工艺裕度并消除问题。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Studies on Failure Mechanism of ET High Via Resistance in Wafer Fabrication

In this paper, an ET high via resistance case was investigated. TEM/EDX technique was used for identification of the root cause. Failure mechanism of Al fluoride defects is discussed. Some preventive actions/solutions were implemented to improve the process margin and eliminate the problem.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2006 IEEE International Conference on Semiconductor Electronics

自引率

0.00%

发文量