具有改进电子停止层的高效635nm谐振腔发光二极管

2009 9th International Conference on Numerical Simulation of Optoelectronic Devices Pub Date : 2009-10-30 DOI:10.1109/NUSOD.2009.5297199

V. Lysak, C. Y. Park, K. Park, Y. T. Lee

{"title":"具有改进电子停止层的高效635nm谐振腔发光二极管","authors":"V. Lysak, C. Y. Park, K. Park, Y. T. Lee","doi":"10.1109/NUSOD.2009.5297199","DOIUrl":null,"url":null,"abstract":"In this work, the analysis of thermal, electrical and optical properties of 635 nm InGaAlP resonant-cavity light-emitting diodes is presented. We show that including the electron stop layer in both side of active layer improves the efficiency of such device due to increasing the electron capture efficiency in the quantum wells. Theoretical analysis is proved by experimental work.","PeriodicalId":120796,"journal":{"name":"2009 9th International Conference on Numerical Simulation of Optoelectronic Devices","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"High efficient 635nm resonant-cavity light-emitting diodes with modified electron stopped layers\",\"authors\":\"V. Lysak, C. Y. Park, K. Park, Y. T. Lee\",\"doi\":\"10.1109/NUSOD.2009.5297199\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, the analysis of thermal, electrical and optical properties of 635 nm InGaAlP resonant-cavity light-emitting diodes is presented. We show that including the electron stop layer in both side of active layer improves the efficiency of such device due to increasing the electron capture efficiency in the quantum wells. Theoretical analysis is proved by experimental work.\",\"PeriodicalId\":120796,\"journal\":{\"name\":\"2009 9th International Conference on Numerical Simulation of Optoelectronic Devices\",\"volume\":\"60 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-10-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 9th International Conference on Numerical Simulation of Optoelectronic Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NUSOD.2009.5297199\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 9th International Conference on Numerical Simulation of Optoelectronic Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2009.5297199","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

本文对635 nm InGaAlP谐振腔发光二极管的热学、电学和光学特性进行了分析。我们发现，在有源层的两侧加入电子停止层，由于增加了量子阱中的电子捕获效率，从而提高了器件的效率。理论分析得到了实验验证。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

High efficient 635nm resonant-cavity light-emitting diodes with modified electron stopped layers

In this work, the analysis of thermal, electrical and optical properties of 635 nm InGaAlP resonant-cavity light-emitting diodes is presented. We show that including the electron stop layer in both side of active layer improves the efficiency of such device due to increasing the electron capture efficiency in the quantum wells. Theoretical analysis is proved by experimental work.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2009 9th International Conference on Numerical Simulation of Optoelectronic Devices

自引率

0.00%

发文量