高性能1.0 /spl μ m和1.3 /spl μ m量子点激光器的特性:p掺杂和隧道注入的影响

Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC. Pub Date : 2004-06-21 DOI:10.1109/DRC.2004.1367834

S. Fathpour, Z. Mi, S. Chakrabarti, P. Bhattacharya, A. R. Kovsh, S. Mikhrin, I. Krestnikov, A. Kozhukhov, N. Ledentsov

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引用次数: 1

摘要

有必要了解性能限制和特殊技术的作用，以提高量子点(QD)激光的性能。在这种情况下，我们研究了p掺杂在点中的作用以及在激光器中向有源点注入电子的隧道。利用这些技术，我们展示了阈值电流(T/sub 0/=/spl infin/)和输出斜率效率与小信号调制带宽/spl长/25 GHz零温度依赖的QD激光器。很明显，最佳水平的p掺杂与隧道注入相结合，将导致具有高调制带宽，零啁啾和非常高的T/sub 0/的激光器。对这些结果进行了介绍和讨论。

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Characteristics of high-performance 1.0 /spl mu/m and 1.3 /spl mu/m quantum dot lasers: impact of p-doping and tunnel injection

There is a need to understand the performance limitations and the role of special techniques to enhance quantum dot (QD) laser performance. In this context, we have examined the role of p-doping in the dots and tunnel injection of electrons into the active dots in the lasers. Utilizing these techniques, we demonstrate QD lasers with zero temperature dependence of the threshold current (T/sub 0/=/spl infin/) and the output slope efficiency and small signal modulation bandwidth /spl cong/25 GHz. It is apparent that an optimal level of p-doping, combined with tunnel injection, will lead to lasers with high modulation bandwidth, zero chirp and very high T/sub 0/. These results are presented and discussed.

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Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.

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