mos门控功率器件物理模型与子电路模型的比较研究

Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics Pub Date : 1994-05-31 DOI:10.1109/ISPSD.1994.583752

N. Andersson, M. Gronlund, P. Kuivalainen, H. Pohjonen

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引用次数: 5

摘要

我们开发了一个新的广泛的mos门控功率器件模型库，用于CAD和功率集成电路和电力电子器件的仿真。在开路模拟器、Aplac和半经验SPICE兼容子电路模型中实现的紧凑物理模型的比较表明，如果子电路的组件建模正确，子电路模型的精度接近物理模型。

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A comparative study of physical and subcircuit models for MOS-gated power devices

We have developed a new extensive model library for MOS-gated power devices aimed for CAD and the simulation of power integrated circuits and power electronics. Comparisons between the compact physical models implemented in an open circuit simulator, Aplac, and semiempirical SPICE compatible subcircuit models show that the accuracy of the subcircuit models approaches that of the physical models, if the components of the subcircuit are modelled properly.

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Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics

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