Samu‐Pekka Ojanen, J. Viheriälä, N. Zia, E. Koivusalo, J. Hilska, H. Tuorila, M. Guina
{"title":"GaSb/Si3N4宽可调谐混合游标激光器发射约$2.55\\ \\mu\\ mathm {m}$","authors":"Samu‐Pekka Ojanen, J. Viheriälä, N. Zia, E. Koivusalo, J. Hilska, H. Tuorila, M. Guina","doi":"10.23919/ISLC52947.2022.9943309","DOIUrl":null,"url":null,"abstract":"We demonstrate a GaSb/Si<inf>3</inf>N<inf>4</inf> Vernier hybrid laser with a wide tuning range of 170 nm around <tex>$2.55\\ \\mu \\mathrm{m}$</tex>, exhibiting > 1 mW of output power in continuous wave over the entire band, making such laser very attractive for sensing applications.","PeriodicalId":443954,"journal":{"name":"2022 28th International Semiconductor Laser Conference (ISLC)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"GaSb/Si3N4 Widely Tunable Hybrid Vernier Laser Emitting Around $2.55\\\\ \\\\mu\\\\mathrm{m}$\",\"authors\":\"Samu‐Pekka Ojanen, J. Viheriälä, N. Zia, E. Koivusalo, J. Hilska, H. Tuorila, M. Guina\",\"doi\":\"10.23919/ISLC52947.2022.9943309\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate a GaSb/Si<inf>3</inf>N<inf>4</inf> Vernier hybrid laser with a wide tuning range of 170 nm around <tex>$2.55\\\\ \\\\mu \\\\mathrm{m}$</tex>, exhibiting > 1 mW of output power in continuous wave over the entire band, making such laser very attractive for sensing applications.\",\"PeriodicalId\":443954,\"journal\":{\"name\":\"2022 28th International Semiconductor Laser Conference (ISLC)\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-10-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 28th International Semiconductor Laser Conference (ISLC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/ISLC52947.2022.9943309\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 28th International Semiconductor Laser Conference (ISLC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ISLC52947.2022.9943309","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
GaSb/Si3N4 Widely Tunable Hybrid Vernier Laser Emitting Around $2.55\ \mu\mathrm{m}$
We demonstrate a GaSb/Si3N4 Vernier hybrid laser with a wide tuning range of 170 nm around $2.55\ \mu \mathrm{m}$, exhibiting > 1 mW of output power in continuous wave over the entire band, making such laser very attractive for sensing applications.