Parametric Analysis and Optimization of Non-Contact Transversally Actuated RF MEMS Switch with High Reliability for Wireless Applications

This paper presents the study of novel non-contact electrostatically actuated transverse RF MEMS switch. The proposed structure consists of transverse comb actuators which are used to turn the switch ON and OFF. Design is operated at the pull-in point which can achieve the displacement of 10.5 µm at 32.6 volts. To avoid short circuiting of the switch, stoppers are used at the distance of 10.5 µm from the spring beams. The proposed switch is free from stiction issues, which are common in series and shunt contact switches. The design was verified by simulating RF part in CST microwave studio while mechanical simulations were confirmed with the help of Intellisuite software. Simulated ON state insertion loss was -0.1331 dB, while OFF state isolation was -24.96 dB respectively at 6 GHz. The von-misses stress of maximum 39.53 MPa has been observed during operation of the switch which is much less than the 7 GPa critical strength of Silicon. Area of the tunable switch is 2.090 × 1.400 mm2.