弹道III-V型nmosfet Γ-L带结构工程紧密结合研究

2011 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2011-10-06 DOI:10.1109/SISPAD.2011.6035052

Ze Yuan, A. Nainani, X. Guan, H. Wong, K. Saraswat

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引用次数: 4

摘要

III-V型nmosfet的一个主要问题是由于低密度态和高迁移率Γ-valley到低迁移率l -谷的电荷溢出而导致离子的降解。在本文中，我们使用紧密结合和弹道输运模型研究了具有不同化学计量的超薄体InxGa1−xSb nmosfet的Γ-L波段结构效应。

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Tight-binding study of Γ-L bandstructure engineering for ballistic III–V nMOSFETs

A major concern for III–V nMOSFETs is the degradation of ION due to low density of states and spillover of the charge from high-mobility Γ-valley to low-mobility L-valley at high sheet charge density. In this paper, we study these Γ-L bandstructure effects for ultrathin-body InxGa1−xSb nMOSFETs with varying stoichiometry using tight-binding and ballistic transport model.

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2011 International Conference on Simulation of Semiconductor Processes and Devices

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