嵌入式DRAM软错误率跨技术预测

Yi-Pin Fang, B. Vaidyanathan, A. Oates
{"title":"嵌入式DRAM软错误率跨技术预测","authors":"Yi-Pin Fang, B. Vaidyanathan, A. Oates","doi":"10.1109/IRPS.2009.5173382","DOIUrl":null,"url":null,"abstract":"Embedded DRAM has been widely used in System on Chip (SOC) systems due to its higher density than SRAM. Embedded DRAM soft error rate (SER) has become an important subject since more embedded dynamic random access memories (DRAM) are now embedded on the chip as technology advances. Experiments show alpha-SER rapidly declines with embedded DRAM scaling while neutron-SER is less significantly impacted. We develop a simple and rapid method to predict neutron- and alpha-SER scaling trends for embedded DRAM without the use of complicated simulation procedures.","PeriodicalId":345860,"journal":{"name":"2009 IEEE International Reliability Physics Symposium","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Soft error rate cross-technology prediction on embedded DRAM\",\"authors\":\"Yi-Pin Fang, B. Vaidyanathan, A. Oates\",\"doi\":\"10.1109/IRPS.2009.5173382\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Embedded DRAM has been widely used in System on Chip (SOC) systems due to its higher density than SRAM. Embedded DRAM soft error rate (SER) has become an important subject since more embedded dynamic random access memories (DRAM) are now embedded on the chip as technology advances. Experiments show alpha-SER rapidly declines with embedded DRAM scaling while neutron-SER is less significantly impacted. We develop a simple and rapid method to predict neutron- and alpha-SER scaling trends for embedded DRAM without the use of complicated simulation procedures.\",\"PeriodicalId\":345860,\"journal\":{\"name\":\"2009 IEEE International Reliability Physics Symposium\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-04-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.2009.5173382\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2009.5173382","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10

摘要

嵌入式DRAM由于具有比SRAM更高的密度,在片上系统(SOC)中得到了广泛应用。随着技术的进步,越来越多的嵌入式动态随机存取存储器(DRAM)被嵌入到芯片中,嵌入式DRAM的软错误率(SER)已成为一个重要的课题。实验表明,α - ser随嵌入式DRAM缩放而迅速下降,而中子- ser受影响较小。我们开发了一种简单快速的方法来预测嵌入式DRAM的中子和α - ser缩放趋势,而无需使用复杂的模拟程序。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Soft error rate cross-technology prediction on embedded DRAM
Embedded DRAM has been widely used in System on Chip (SOC) systems due to its higher density than SRAM. Embedded DRAM soft error rate (SER) has become an important subject since more embedded dynamic random access memories (DRAM) are now embedded on the chip as technology advances. Experiments show alpha-SER rapidly declines with embedded DRAM scaling while neutron-SER is less significantly impacted. We develop a simple and rapid method to predict neutron- and alpha-SER scaling trends for embedded DRAM without the use of complicated simulation procedures.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信