{"title":"一种电离辐射硬度的热场氧化工艺","authors":"Yuanfu Zhao, Yuhong Hu, Rongliang Yan, Guoqiang Zhang, Diyuan Ren","doi":"10.1109/ICSICT.1995.503384","DOIUrl":null,"url":null,"abstract":"A thermal field oxidation process for ionizing radiation hardness has been described. It is shown that the failure threshold of 54HC04, in which the hardened thermal field process has been applied, is excess to 1/spl times/10/sup 6/rad(Si).","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A thermal field oxidation process for ionizing radiation hardness\",\"authors\":\"Yuanfu Zhao, Yuhong Hu, Rongliang Yan, Guoqiang Zhang, Diyuan Ren\",\"doi\":\"10.1109/ICSICT.1995.503384\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A thermal field oxidation process for ionizing radiation hardness has been described. It is shown that the failure threshold of 54HC04, in which the hardened thermal field process has been applied, is excess to 1/spl times/10/sup 6/rad(Si).\",\"PeriodicalId\":286176,\"journal\":{\"name\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.1995.503384\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 4th International Conference on Solid-State and IC Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1995.503384","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A thermal field oxidation process for ionizing radiation hardness
A thermal field oxidation process for ionizing radiation hardness has been described. It is shown that the failure threshold of 54HC04, in which the hardened thermal field process has been applied, is excess to 1/spl times/10/sup 6/rad(Si).
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