采用高q ic以上电感器的90nm RF-CMOS中的24 GHz LNA

Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005. Pub Date : 2005-12-05 DOI:10.1109/ESSCIR.2005.1541565

O. Dupuis, Xiao Sun, G. Carchon, P. Soussan, M. Ferndahl, S. Decoutere, W. Raedt

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引用次数: 26

摘要

通过24 GHz LNA，对90nm RF- cmos结合薄膜ic以上高q电感器的k波段射频能力进行了评估。LNA作为单级共源放大器实现，实现了24 GHz CMOS技术的最先进结果。记录噪声系数为3.2 dB，增益为7.5 dB。输入和输出匹配分别为- 16db和- 30db。LNA工作电压为1V，功耗仅为10.6 mA。

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24 GHz LNA in 90nm RF-CMOS with high-Q above-IC inductors

K-band RF capabilities of 90nm RF-CMOS combined with thin-film above-IC high-Q inductors is assessed by means of a 24 GHz LNA. The LNA, implemented as a single stage common-source amplifier led to state-of-the art results for CMOS technology at 24 GHz. Record noise figure of 3.2 dB is obtained with a gain of 7.5 dB. Input and output matching are respectively -16 dB and -30 dB. The LNA works with a 1V supply voltage and consumes only 10.6 mA.

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Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.

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