{"title":"基于慢波结构的0.18μm CMOS k波段增益增强功率放大器","authors":"Gang He, Bo Zhang, Xubang Shen","doi":"10.1109/RFIT.2014.6933257","DOIUrl":null,"url":null,"abstract":"A 18 to 24-GHz broadband power amplifier (PA) by 0.18 um CMOS technology is presented in this paper. The low loss microstrip line matching technique is used to reduce transmission losses and achieve higher gain, PAE and enough output power. An improved Gain-boosting technique is also included in the PA architecture to improve high frequency gain and gain flatness. The measurement results show that small-signal gain is large than 18.5dB from 18 to 24-GHz, while the gain variation is less than 1.5dB. The maximum PAE is about 18%, the output P1dB is 13.1 dBm and 15dBm Psat.","PeriodicalId":281858,"journal":{"name":"2014 IEEE International Symposium on Radio-Frequency Integration Technology","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A k-band gain enhanced power amplifier in 0.18μm CMOS process by slow wave structure\",\"authors\":\"Gang He, Bo Zhang, Xubang Shen\",\"doi\":\"10.1109/RFIT.2014.6933257\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 18 to 24-GHz broadband power amplifier (PA) by 0.18 um CMOS technology is presented in this paper. The low loss microstrip line matching technique is used to reduce transmission losses and achieve higher gain, PAE and enough output power. An improved Gain-boosting technique is also included in the PA architecture to improve high frequency gain and gain flatness. The measurement results show that small-signal gain is large than 18.5dB from 18 to 24-GHz, while the gain variation is less than 1.5dB. The maximum PAE is about 18%, the output P1dB is 13.1 dBm and 15dBm Psat.\",\"PeriodicalId\":281858,\"journal\":{\"name\":\"2014 IEEE International Symposium on Radio-Frequency Integration Technology\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE International Symposium on Radio-Frequency Integration Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIT.2014.6933257\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Symposium on Radio-Frequency Integration Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIT.2014.6933257","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A k-band gain enhanced power amplifier in 0.18μm CMOS process by slow wave structure
A 18 to 24-GHz broadband power amplifier (PA) by 0.18 um CMOS technology is presented in this paper. The low loss microstrip line matching technique is used to reduce transmission losses and achieve higher gain, PAE and enough output power. An improved Gain-boosting technique is also included in the PA architecture to improve high frequency gain and gain flatness. The measurement results show that small-signal gain is large than 18.5dB from 18 to 24-GHz, while the gain variation is less than 1.5dB. The maximum PAE is about 18%, the output P1dB is 13.1 dBm and 15dBm Psat.
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