用拉伸金属栅极和绝缘体(sSOI)衬底上应变硅增强FinFET性能

2006 64th Device Research Conference Pub Date : 2006-06-26 DOI:10.1109/DRC.2006.305109

W. Xiong, K. Shin, C. Cleavelin, T. Schulz, K. Schruefer, I. Cayrefourcq, M. Kennard, C. Mazure, P. Patruno, T. Liu

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引用次数: 12

摘要

1. 德州仪器股份有限公司，德州德州达拉斯德州大道13121号2 .加州大学伯克利分校电气工程与计算机科学系，加州加州947203 .英飞凌技术公司，德国纽必堡85579;SOITEC S.A，法国，柏林，38190Synopsys, Inc.， 700 E. Middlefield Road, Mountain View, CA 94043 USA电话:(510)643-2639传真:(510)643-2636电子邮件:ksshinweecs.berkeley.edu

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FinFET Performance Enhancement with Tensile Metal Gates and Strained Silicon on Insulator (sSOI) Substrate

1. Texas Instruments Inc., SiTD, 13121 TI Boulevard, Dallas, TX USA 2. Dept. of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720 3. Infineon Technologies, Am Campeon 1-12, 85579 Neubiberg, Germany 4. SOITEC S.A., Parc Technologique des Fontaines 38190 Bernin, France 5. Synopsys, Inc., 700 E. Middlefield Road, Mountain View, CA 94043 USA Phone: (510) 643-2639 Fax: (510) 643-2636, E-mail: ksshinweecs.berkeley.edu

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2006 64th Device Research Conference

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