模拟电路的参数化DFM解决方案:电驱动的热点检测、分析和校正流程

R. Salem, A. Arafa, Sherif Hany, Abdelrahman ElMously, H. Eissa, M. Dessouky, D. Nairn, M. Anis
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引用次数: 2

摘要

随着超大规模集成电路技术进入先进节点,设计人员和晶圆代工厂暴露出一系列迄今为止微不足道的良率问题。为了对抗产量失败,半导体行业已经部署了通常称为制造设计(DFM)的新工具和方法。大多数早期的工作集中在灾难性故障或物理DFM问题上。最近,人们越来越重视参数化产量问题,即电子dfm (e-DFM)。在本文中,我们提出了一个完整的电气感知设计制造解决方案,检测,分析和修复由模拟电路设计中不同工艺变化引起的电气热点(e-热点)。提出了新的算法来实现用于开发该解决方案的引擎。我们提出的流量在65nm工业电压控制振荡器(VCO)上进行了测试。确定了直流电流变化为5.5%的e热点器件。在固定e热点后,这些器件的直流电流变化减少到0.9%,同时保留了原有的VCO规格。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A parametric DFM solution for analog circuits: Electrical driven hot spot detection, analysis and correction flow
As VLSI technology pushes into advanced nodes, designers and foundries have exposed a hitherto insignificant set of yield problems. To combat yield failures, the semiconductor industry has deployed new tools and methodologies commonly referred to as design for manufacturing (DFM). Most of the early efforts concentrated on catastrophic failures, or physical DFM problems. Recently, there has been an increased emphasis on parametric yield issues, referred to as electrical-DFM (e-DFM). In this paper, we present a complete electrical-aware design for manufacturing solution that detects, analyzes, and fixes electrical hotspots (e-hotspots) caused by different process variations within the analog circuit design. Novel algorithms are proposed to implement the engines that are used to develop this solution. Our proposed flow is examined on a 65nm industrial voltage control oscillator (VCO). E-hotspot devices with 5.5% variation in DC current are identified. After fixing the e-hotspots, the DC current variation in these devices is reduced to 0.9%, while saving the original VCO specifications.
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