应变对硅纳米线场效应管空穴电流的影响

2010 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2010-10-14 DOI:10.1109/SISPAD.2010.5604528

H. Minari, T. Kitayama, Masahiro Yamamoto, N. Mori

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引用次数: 3

摘要

对直径分别为1.5nm和2.5 nm的应变硅纳米线场效应管进行了基于非平衡格林函数和紧束缚形式的空穴输运模拟。仿真结果表明，对于直径为2.5 nm的硅纳米线场效应管，压缩应变增强了弹孔电流，而拉伸应变增强了弹孔电流。对于直径为1.5 nm的硅纳米线场效应管，弹孔电流几乎不受应变大小的影响。

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Strain effects on hole current in silicon nanowire FETs

Hole transport simulation based on the nonequilibrium Green's function and tight-binding formalism has been performed for strained Si nanowire FETs with a diameter of 1.5nm and 2.5 nm. Simulation results show that for Si nanowire FETs with a diameter of 2.5 nm, the compressive strain enhances the ballistic hole current, while the tensile strain gives opposite results. For Si nanowire FETs with a diameter of 1.5 nm, the ballistic hole current hardly depends on the strain magnitude.

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2010 International Conference on Simulation of Semiconductor Processes and Devices

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