CMOS后端集成射频MEMS谐振器

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004. Pub Date : 2004-09-08 DOI:10.1109/SMIC.2004.1398203

S. Pacheco, P. Zurcher, S. Young, D. Weston, W. Dauksher

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引用次数: 20

摘要

通过低温工艺流程制备了CMOS后端线(BEOL)兼容MEMS谐振器。外模谐振腔光束由薄的TaN和厚的sion1m双层组成。下拉电压的直流测量表明，由于电场击穿穿过底部电极到谐振器光束间隙，工作电压受到限制。谐振器的射频响应显示谐振频率在11.0 ~ 11.6 MHz范围内，Q值为2200。

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RF MEMS resonator for CMOS back-end-of-line integration

CMOS back-end-of-line (BEOL) compatible MEMS resonators were fabricated via a low-temperature process flow. The exural-mode resonator beams are made of a bi-layer consisting of a thin TaN and thick SiON 1m. DC measurements of pull-down voltage indicate limitations to operating voltages due to electric field breakdown across the bottom electrode to resonator beam gap. The RF response of the resonators shows resonant frequencies in the 11.0-11.6 MHz range with Q values of 2200.

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来源期刊

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.

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