隧道场效应管中肖特基势垒触点对测量电容的影响

2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) Pub Date : 2018-03-01 DOI:10.1109/ULIS.2018.8354766

A. Farokhnejad, M. Schwarz, M. Graef, F. Horst, B. Iñíguez, F. Lime, A. Kloes

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引用次数: 2

摘要

根据测量值、TCAD模拟和[2]中提出的tfet固有电容紧凑模型之间的偏差，分析了Si平面p- tfet在超薄体[1]上NiSi2接触处的肖特基势垒的影响。提出并讨论了固有电容偏差原因的理论。此外，还进行了TCAD仿真来支持该理论。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effect of Schottky barrier contacts on measured capacitances in tunnel-FETs

The influence of Schottky barriers at NiSi2 contacts of Si Planar p-TFETs on Ultrathin Body [1] is analyzed in terms of deviations between measurements, TCAD simulations and a proposed compact model for the intrinsic capacitances in TFETs presented in [2]. A theory for the reason of the deviations for the intrinsic capacitances is evolved and discussed. Additionally, TCAD simulations are performed to support the theory.

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来源期刊

2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

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